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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C851N3 Issued Date : 2004.02.27 Revised Date : 2004.07.01 Page No. : 1/4
BTB1386LN3
Features
* Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A * Excellent DC current gain characteristics * Complementary to BTD2098LN3
Symbol
BTB1386LN3
Outline
SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Note : 1. Single Pulse Pw350s, Duty2%.
Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD RJA Tj Tstg
Limits -20 -15 -6 -5 -10 (Note ) 225 556 150 -55~+150
Unit V V V A mW C/W C C
BTB1386LN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -20 -15 -6 120 Typ. 120 60 Max. -0.5 -0.5 -1.0 560 Unit V V V A A V MHz pF
Spec. No. : C851N3 Issued Date : 2004.02.27 Revised Date : 2004.07.01 Page No. : 2/4
Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-15V, IE=0 VEB=-5V, IC=0 IC=-4A, IB=-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IC=-50mA, f=30MHz VCB=-20V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE
Rank Range Q 120~270 R 180~390 S 270~560
BTB1386LN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Spec. No. : C851N3 Issued Date : 2004.02.27 Revised Date : 2004.07.01 Page No. : 3/4
Saturation Voltage vs Collector Current
10000 VCE(SAT) Saturation Voltage---(mV) 1000
IC=100IB IC=60IB
Current Gain---HFE
100
VCE=2V
100
VCE=1V
10
IC=30IB IC=10IB
10 1 10 100 1000 10000 Collector Current---IC(mA)
1 1 10 100 1000 10000 Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000 Power Dissipation---PD(mW) Saturation Voltage---(mV)
VBE(SAT) @ IC=10IB
Power Derating Curve
250 200 150 100 50 0
1000
100 1 10 100 1000 Collector Current---IC(mA) 10000
0
50 100 150 Ambient Temperature---TA()
200
BTB1386LN3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
A L 3 B 1 2 S
Spec. No. : C851N3 Issued Date : 2004.02.27 Revised Date : 2004.07.01 Page No. : 4/4
Marking:
TE BH
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
C D K
H
J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1386LN3
CYStek Product Specification

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